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发明公开
CN109328402A 量子点发光器件 有权

量子点发光器件
摘要：
本发明提供一种量子点发光二极管，其包含i)由选自由以下组成的组的半导体材料制成的至少一种半导体纳米颗粒的发射层：II-VI族化合物、II-V族化合物、III-VI族化合物、III-V族化合物、IV-VI族化合物、I-III-VI族化合物、II-IV-VI族化合物、II-IV-V族化合物或其任何组合；和ii)用于空穴注入层或空穴传输层的聚合物；并且所述聚合物包含作为聚合单元的至少一种或多种具有第一单体结构的单体，所述第一单体结构包含a)可聚合基团；b)具有式NAr1Ar2Ar3的电活性基团，其中Ar1、Ar2和Ar3独立地为C6-C50芳香族取代基；和(c)连接所述可聚合基团和所述电活性基团的连接基团。
摘要（英）：

The present invention provides a quantum dot light emitting diode comprising i) an emitting layer of at least one semiconductor nanoparticle made from semiconductor materials selected from the group consisting of Group II- VI compounds, Group II-V compounds, Group III- VI compounds, Group III-V compounds, Group IV- VI compounds, Group I-III- VI compounds, Group II-IV-VI compounds, Group II-IV-V compounds, or any combination thereof; and ii) a polymer for hole injection or hole transport layer; and the polymer comprises, as polymerized units, at least one or more monomers having a first monomerstructure comprising a) a polymerizable group, b) an electroactive group with formula NAr1Ar2Ar3 wherein Ar1, Ar2 and Ar3 independently are C6-C50 aromatic substituents, and (c) a linker group connecting the polymerizable group and the electroactive group.

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