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发明公开
CN109576681A 一种低漏电流的YDMCO薄膜及其制备方法 有权 转让

一种低漏电流的YDMCO薄膜及其制备方法
摘要：
本发明提供一种低漏电流的YDMCO薄膜及其制备方法，化学式为Y1-xDyxMn0.5Cr0.5O3，其中，0.1≤x≤0.5，六方结构，空间群为P63cm。本发明的Y1-xDyxMn0.5Cr0.5O3薄膜是在YMnO3的A位掺杂稀土离子，B位掺杂过渡金属离子，实验证明Dy掺杂进入双棱锥结构的中间层和Cr掺杂抑制了Mn3+转变成Mn2+和Mn4+，最终使Y1-xDyxMn0.5Cr0.5O3薄膜内部结构发生畸变，而六方结构的畸变导致薄膜的漏电流机制由欧姆机制和空间电荷机制共存转变为单一欧姆机制，最终降低了漏电流密度。
摘要（英）：

The invention provides a low leakage current YDMCO thin film and a preparation method thereof, the chemical formula of the YDMCO thin film is Y1-xDyxMn0.5Cr0.5O3, wherein x is greater than or equal to0 and less than or equal to 5, the structure is hexagonal structure, and the space group is P63 cm. The Y1-xDyxMn0.5Cr0.5O3 thin film is that a rare earth ion is doped in the A site of YMnO3, and a transition metal ion is doped in the B site of YMnO3. Experiments prove that Dy is doped into the middle layer of the double-pyramid structure and Cr is doped to inhibit Mn3+ to be converted into Mn2+and Mn4+, and finally the internal structure of the Y1-xDyxMn0.5Cr0.5O3 thin film is distorted. The distortion of the hexagonal structure causes the leakage current mechanism of the thin film to change from the ohmic mechanism and the space charge mechanism to the single ohmic mechanism, and finally the leakage current density is reduced.

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