The invention discloses a preparation method for an electric injection silicon-based III-V group edge-emitting nanowire lase, and the method comprises the following steps: depositing a silicon dioxidelayer on an SOI substrate, and etching a rectangular groove on the silicon dioxide layer; corroding a v-shaped groove in the top silicon of the SOI substrate below the rectangular groove, and enabling the v-shaped groove to be communicated with the rectangular groove to form a communicating groove; growing an epitaxial structure of the silicon-based III-V group edge emitting nanowire laser in thecommunicating groove; preparing a metal electrode pattern on the silicon-based III-V group edge emitting nanowire laser. According to the invention, the electric injection technological method for epitaxially growing a III-V group nanowire material on the SOI substrate, and meanwhile, a prepared electrode can be used for testing the dynamic characteristics of the silicon-based III-V group edge-emitting nanowire laser.