The embodiment of the invention provides an indium antimonide thin film terahertz metasurface and a thermal tuning method and preparation method thereof. The terahertz metasurface is arranged to be ofa three-layer structure comprising a rectangular substrate layer, a column array structure layer and an indium antimonide thin film so that the dielectric constant of the indium antimonide thin filmcan be changed along with temperature change, and the resonance frequency of the terahertz metasurface is changed. Therefore, the terahertz metasurface can change the resonance frequency by changing the temperature, and meanwhile, the tuning range of the terahertz wave resonance frequency is enlarged. The terahertz metasurface is simple in preparation method and suitable for being widely applied to the field of photoelectric manufacturing, so that the application range of the terahertz metasurface is widened.