The invention relates to a semiconductor device and a manufacturing method of the semiconductor device. Provided is a semiconductor device in which electromagnetic noise leakage to the outside and theinfluence of electromagnetic noise from the outside are suppressed and in which warping of a semiconductor substrate is very low. The semiconductor device includes a lower insulating layer formed ona primary surface of a semiconductor substrate; a sealing layer formed in contact with a top surface of the lower insulating layer; and a conductive member including a first conductive member formed on the sealing layer and having a first film thickness and a second conductive member formed on the sealing layer in contact with a first conductive member and having a second film thickness that is smaller than the first film thickness.