Provided are a method and apparatus for preparing a SiC raw material for growing a SiC crystal. The method comprises: loading SiC powder into a first graphite crucible, and installing, in an invertedmanner, a second graphite crucible on the first graphite crucible; and putting the two graphite crucibles, which have been installed, in a heating apparatus, evacuating the heating apparatus and raising the temperature to a pre-set temperature, wherein the first graphite crucible is located in a relatively high temperature region, the second graphite crucible is located in a relatively low temperature region, and the SiC powder is sublimated and transported to the second graphite crucible, and is crystallized to obtain a crystalline SiC raw material to be used for growing a SiC crystal. The apparatus comprises a first graphite crucible, a second graphite crucible and a heating device; furthermore, a separator is arranged, in an upward manner, at the bottom of the second graphite crucible,wherein the separator is spaced apart from the side wall of the second graphite crucible by a predetermined distance. The method and the apparatus can reduce the amount of impurities in a SiC crystalprepared from this raw material, reduce microscopic inclusions, reduce dislocation density, and provide the growth rate and yield of the SiC crystal in the middle and later stages.