The invention belongs to the field of copper metal wire manufacturing process, and particularly relates to a process technology for improving short circuit of a copper wire. First chemical mechanicalgrinding is performed on a first oxide layer with grinding liquid, wherein the grinding liquid includes grinding particles, the grinding particles have the colloidal state, the grinding solid contentof the grinding particles in the grinding liquid ranges from 0.17 to 0.5% volume percent; the surface of the first oxide layer after the first chemical mechanical grinding is cleaned by the cleaning liquid after the first chemical mechanical grinding; and first metal deposition is performed, a first metal layer is deposited on the surface of the first oxide layer after the first chemical mechanical grinding, the scratch defect of the oxide layer is improved by changing the characteristics of the grinding liquid and the type of the cleaning liquid to facilitate flat deposition of the metal layer. In more specific embodiments, subsequent tungsten metal chemical mechanical grinding and copper metal chemical mechanical grinding can also further repair the scratch defect in the previous processby using the grinding liquid so as to effectively improve the short circuit condition of the copper metal wire.