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发明公开
CN109979826A 双面烧结卡具、压接式IGBT模块烧结方法及其制得的子模组 无效 - 驳回

双面烧结卡具、压接式IGBT模块烧结方法及其制得的子模组
摘要：
本发明提供了一种功率芯片双面烧结的压接式IGBT模组的制备方法，该方法包括：从下至上将下钼片、焊片、IGBT芯片、焊片和上钼片组装到烧结卡具中；组装限位销压制压片；用连续真空烧结炉烧结得单芯片烧结连接结构；从下至上依次组装的塑料框架、弹簧探针和烧结结构，得所述单芯片压接子模组。本发明提供的制备方法用连续式真空烧结炉，能够大规模烧结芯片，极大地缩短了工序时长，效率高，速度快；本发明中提供的烧结方法采用的烧结卡具与压片，解决了芯片与钼片烧结后的对中问题，并且可以确保烧结后结构的厚度差值可控制在8μm以下。
摘要（英）：

The invention provides a preparation method of a crimping IGBT module with power chip two-sided sintering. The method comprises the steps of: assembling a lower molybdenum sheet, a soldering lug, an IGBT chip, a s soldering lug and an upper molybdenum sheet into a sintering fixture from bottom to top; assembling a limiting pin pressing tablet; performing sintering by using a continuous vacuum sintering furnace to obtain a single-chip sintering connection structure; and obtaining a single-chip crimping sub-module by assembling a plastic frame, a spring probe and a sintering structure from bottom to top in order. The preparation method provided by the invention uses the continuous vacuum sintering furnace, can sinter chips in a large scale, greatly shortens the process time, and has high efficiency and high speed; the sintering fixture and the pressing sheet adopted by the sintering method provided by the invention solve the centering problem of the chip and the molybdenum sheet after sintering, and it is ensured that the thickness difference of the sintered structure can be controlled below 8[Mu]m.

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