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发明公开
CN110004493A 一种钨酸镧（钆）钠晶体的生长方法 无效 - 驳回

一种钨酸镧（钆）钠晶体的生长方法
摘要：
本发明涉及一种钨酸镧（钆）钠晶体的生长方法，所述钨酸镧（钆）钠晶体为钨酸镧钠晶体或钨酸钆钠晶体，所述方法包括：将晶体原料和籽晶装入坩埚并封闭后，升温至1250～1350℃，待晶体原料全部熔化后，开始晶体的生长，其中，坩埚的下降速率0.3～0.8 mm/h，生长界面的温度梯度为40～70℃/cm；生长结束后，自然冷却至室温，得到所述钨酸镧（钆）钠晶体。
摘要（英）：

The invention relates to a growing method of sodium lanthanum (gadolinium) tungstate crystals. The sodium lanthanum (gadolinium) tungstate crystals are sodium lanthanum tungstate crystals or sodium gadolinium tungstate crystals. The method comprises steps as follows: after crystal raw materials and seed crystals are placed in a crucible and the crucible is closed, the temperature is increased to 1,250-1,350 DEG C, and crystal growth starts after the crystal raw materials are totally molten, wherein the lowering speed of the crucible is 0.3-0.8 mm/h and temperature gradient of a growth interface is 40-70 DEG C/cm; after growth is finished, crystals are naturally cooled to the room temperature, and the sodium lanthanum (gadolinium) tungstate crystals are obtained.

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