The present techniques generally relate to fabrication of a correlated electron material (CEM) switch. In embodiments, processes are described in which conductive traces (222) may be formed on or overan insulating material (210). Responsive to forming voids (230) in the insulating material, localized portions of the conductive traces in contact with the voids may be exposed to gaseous oxidizing agents (221), which may convert the localized portions (240) of the conductive traces to a CEM. In embodiments, an electrode material (250) may be deposited within the voids to contact the localized portion (240) of conductive trace converted to the CEM.