The invention belongs to the technical field of electronic devices, and particularly relates to a metal oxide-based double-oxide-layer RRAM and a preparation method thereof. The double-oxide-layer RRAM comprises a top electrode layer, a resistance-change oxidation layer and a substrate which are stacked from top to bottom; the resistance-change oxidation layer is an In2O3 and Al2O3 double-layer metal oxide layer which is stacked from top to bottom; the top electrode layer comprises a plurality of top electrodes arrayed on the resistance-change oxidation layer; a protection layer is arranged onthe surface, far away from the resistance-change oxidation layer, of the top electrode; and the substrate comprises a bottom electrode layer and an insulating layer. According to the invention, two layers of metal oxide layers are prepared by adopting a solution method process, so that the low-cost preparation of the RRAM is realized; and compared with an RRAM device with a single-layer metal oxide layer, the double-oxide-layer RRAM has the advantages that the resistance change characteristic is better, the equipment and the raw material investment are less, and the large-scale industrial application can be realized.