The invention discloses a 3D NAND data operation method and a control circuit. The method comprises the steps of during the process of executing the data erasing operation, when the data storage layeris subjected to data erasure, synchronously performing data erasure on an intermediate redundant layer, and after data erasure operation on the data storage layer and the intermediate redundant layeris completed, programming the intermediate redundant layer to enable the intermediate redundant layer to reach a preset target programming threshold voltage, so that according to the technical schemeof the invention, when the data erasing operation is executed, firstsly the intermediate redundant layer and the data storage layer are erased synchronously; and then the intermediate transition redundancy layer is directly programmed, so that a threshold voltage of the intermediate transition redundancy layer is stabilized at a target programming threshold voltage, the threshold voltage drift problem of the intermediate redundancy layer is avoided, meanwhile, the erasing efficiency of an edge data storage layer adjacent to the intermediate redundancy layer is improved, and the performance ofthe 3D NAND is improved.