The invention discloses a non-polar surface nitride quantum well infrared detector and a preparation method thereof. Aiming at the problem that a common c-plane nitride QWIP has a polarization electric field, a non-polar surface nitride quantum well infrared detector is provided. The structure of the non-polar surface nitride quantum well infrared detector has no a polarization electric field andeasy to vertically convey carriers. The non-polar surface nitride quantum well is a growth surface stress compensation structure to effectively relieve the stress relaxation anisotropy of non-polar surface growth and improve the crystal quality of the non-polar surface nitride material; a matching circuit comprises a Wheatstone bridge, the size of the corresponding matching resistor is set according to the size of a resistor in an infrared photosensitive element, a voltage cut-off element is in a non-conductive state when there is no infrared illumination, the voltage cut-off element is used for suppressing the background noise and improving the signal-to-noise ratio of the device; and moreover, the third generation nitride semiconductor materials are adopted for preparation, the non-polarsurface nitride quantum well infrared detector has the advantages of the room temperature operation, the ultraviolet integration, and the wide infrared spectrum range.