The present invention provides a full-quaternary silicon-based C-band semiconductor laser. The full-quaternary silicon-based C-band semiconductor laser comprises a silicon substrate, a side negative electrode forming an external negative power source introducing port and an N-type doped silicon material region are arranged side by side on the silicon substrate, the N-type doped silicon material region is provided with three layers of Ge/Si quantum wells, the three layers of Ge/Si quantum wells are provided with ridge waveguide structures, the ridge waveguide structures are provided with upperside positive electrodes forming the external positive power source introducing ports through connection. The full-quaternary silicon-based C-band semiconductor laser solves the problem that the lightsource and the CMOS process are not compatible in the silicon-based photoelectron integration field in the prior art. The light source of the full-quaternary silicon-based C-band semiconductor lasercan achieve the direct growth of the light source on the silicon wafer to omit the step of a traditional bonding light source and reduce the manufacturing difficulty and cost of the photoelectron integration. The full-quaternary silicon-based C-band semiconductor laser can work at room temperature.