The invention discloses a trench gate type IGBT device and a preparation method and apparatus thereof. The trench gate type IGBT device comprises a trench gate structure. A fourth functional region layer is located between a third functional region layer and a first electrode. A second functional region layer is arranged on the third functional region layer. A first functional region layer, a third electrode, a first electrode layer and a second electrode layer are formed in the second functional region layer. A dielectric layer is formed on the second electrode, and the dielectric layer is located between the second electrode and the third electrode. One end face of the third electrode is in contact with the dielectric layer, and the other end face and the side wall region of the third electrode are surrounded by the first electrode layer. The second electrode layer is parallel to the dielectric layer and is in contact with the bottom region of the trench gate structure. The first functional region layer is in contact with the second electrode and the dielectric layer and is arranged on the two sides of the trench gate structure. By arranging the second electrode layer in the trench gate structure, the reverse transmission capacitance of the trench gate type IGBT device can be reduced.