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发明公开
CN110677017A 一种低EMI常通型SiCJFET的驱动电路 有权

一种低EMI常通型SiCJFET的驱动电路
摘要：
本发明提供一种低EMI常通型SiCJFET的驱动电路，包括驱动电流调节电路、驱动电压钳位模块、驱动功率管Q2、驱动电压关断功率管Q3、反相器INV1；驱动功率管Q2的漏极接常通型SiCJFET功率管Q1的源极，驱动功率管Q2的源极接SiCJFET功率管Q1的栅极并接地；驱动功率管Q2的栅极接驱动电压vDrv；驱动电流调节电路110接开关信号In，驱动电流调节电路110的电流输出端接驱动功率管Q2的栅极；驱动电压钳位模块140接驱动功率管Q2的栅极；反相器INV1的输入端接开关信号In，输出端接驱动电压关断功率管Q3的栅极，Q3的源极接地，漏极接驱动功率管Q2的栅极；本发明实现一种低损耗、低EMI的常通型SiC JFET驱动电路。
摘要（英）：

The invention provides a driving circuit of low-EMI normal-on-type SiCJFET. The driving circuit comprises a driving current adjusting circuit, a driving voltage clamping module, a driving power tube Q2, a driving voltage turn-off power tube Q3 and a phase inverter INV1. A drain electrode of the driving power tube Q2 is connected with a source electrode of a normal-on SiCJFET power tube Q1, and thesource electrode of the driving power tube Q2 is connected with a grid electrode of the SiCJFET power tube Q1 and is grounded. The grid electrode of the driving power tube Q2 is connected with a driving voltage vDrv. A driving current adjusting circuit 110 is connected with a switching signal In, and a current output end of the driving current adjusting circuit 110 is connected with the grid electrode of the driving power tube Q2. A driving voltage clamping module 140 is connected with the grid electrode of the driving power tube Q2. An input end of the phase inverter INV1 is connected with the switching signal In, an output end is connected with the grid electrode of the driving voltage turn-off power tube Q3, the source electrode of the Q3 is grounded, and the drain electrode is connected with the grid electrode of the driving power tube Q2. A normal-on type SiC JFET driving circuit with low losses and low EMI is realized.

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