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发明公开
CN110690343A 具有减小的应力敏感度的磁阻传感器 审中-实审

具有减小的应力敏感度的磁阻传感器
摘要：
本公开涉及具有减小的应力敏感度的磁阻传感器。例如，一种磁阻传感器，包括第一非磁性层、第二非磁性层和磁性自由双层。磁性自由双层设置在第一非磁性层和第二非磁性层之间，磁性自由双层包括耦合至第二磁性自由层的第二磁性自由层。第一磁性自由层耦合至第一非磁性层，并且第二磁性自由层耦合至第二非磁性层。第二非磁性层包括非磁性材料，其原子半径在第一磁性自由层和第二磁性自由层中的至少一个的原子半径的10％以内。
摘要（英）：

The present invention relates to a magnetoresistive sensor with redued stress sensitivity. The magnetoresistive sensor includes a first non-magnetic layer, a second non-magnetic layer, and a magneticfree bi-layer. The magnetic free bi-layer is disposed between first non-magnetic layer and the second non-magnetic layer, the magnetic free bi-layer including a first magnetic free layer coupled to asecond magnetic free layer. The first magnetic free layer is coupled to the first non-magnetic layer, and the second magnetic free layer is coupled to the second non-magnetic layer. The second non-magnetic layer comprises a non-magnetic material having an atomic radius within 10% of an atomic radius of at least one of the first magnetic free layer and the second magnetic free layer.

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