A method for manufacturing a semiconductor laser with a slant ridge structure and a bonding wire pattern. A prepared shoulder I and a shoulder II are not as wide, so that a ridge structure is not positioned in the middle of a chip, a sufficient space can be reserved on the wider shoulder II for arrangement of a gold wire bonding wire position pattern, then gold wire bonding is performed on the gold wire bonding wire position pattern, the condition that a die is damaged is effectively avoided, and the condition that the die is necrotic or fails during gold wire bonding is effectively avoided. Meanwhile, a current injection window is prepared on the ridge structure, namely a light-emitting surface is marked, so that subsequent packaging is facilitated. A groove II is prepared in the wider shoulder II, so that the condition that the current injection is uneven due to the fact that the shoulder II is wider than the shoulder I is avoided. Since a layer of dielectric film II grows on an areaof the surface of a laser chip except the gold wire bonding wire position pattern, the chip can be protected from being damaged.