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发明公开
CN110783336A 半导体器件 审中-公开

半导体器件
摘要：
提供了一种半导体器件。该器件包括在衬底上沿第一方向延伸的有源图案，围绕有源图案的侧壁的一部分的场绝缘膜，在有源图案和场绝缘膜上沿第二方向延伸的第一栅结构，与第一栅结构间隔开并在有源图案和场绝缘膜上沿第二方向延伸的第二栅结构，以及第一栅结构与第一栅结构之间的第一器件隔离膜，其中第一栅结构的面向第一器件隔离膜的侧壁包括相对于有源图案的上表面具有锐角的倾斜表面，并且第一器件隔离膜的最下表面低于场绝缘膜的最上表面或与场绝缘膜的最上表面基本上共面。
摘要（英）：

A semiconductor device is provided. The device includes an active pattern extending in a first direction on a substrate; a field insulating film surrounding a part of the active pattern; a first gatestructure extending in a second direction on the active pattern and the field insulating film, a second gate structure spaced apart from the first gate structure and extending in the second directionon the active pattern and the field insulating film; and a first device isolation film between the first and second gate structure, wherein a side wall of the first gate structure facing the first device isolation film includes an inclined surface having an acute angle with respect to an upper surface of the active pattern, and a lowermost surface of the first device isolation film is lower than or substantially coplanar with an uppermost surface of the field insulating film.

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