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发明公开
CN110808279A 基于F离子保护环结构的AlGaN/GaN肖特基势垒二极管及制作方法 无效 - 撤回

基于F离子保护环结构的AlGaN/GaN肖特基势垒二极管及制作方法
摘要：
本发明公开了一种基于F离子保护环结构的AlGaN/GaN肖特基势垒二极管器件及制作方法，主要解决现有技术击穿电压较低，可靠性较差的问题。其自下而上包括衬底(1)、成核层(2)、缓冲层(3)、插入层(4)、势垒层(5)，势垒层(5)上方设有阳极(7)和阴极(8)，势垒层(5)中的阳极下方1～3μm长度内注有F离子，形成F离子保护环(6)，该阳极与阴极之间为钝化层(9)。本发明由于在势垒层中设有F离子保护环，降低了阳极下方边缘电场峰值，提高了击穿电压，且工艺简单、成品率高和可靠性好，可作为大功率系统以及开关应用的基本器件。
摘要（英）：

The invention discloses an AlGaN/GaN Schottky barrier diode device based on an F ion protection ring structure and a manufacturing method thereof, mainly to solve the problems of low breakdown voltageand poor reliability in the prior art. The AlGaN/GaN Schottky barrier diode device based on the F ion protection ring structure comprises a substrate (1), a nucleating layer (2), a buffer layer (3),an insertion layer (4) and a barrier layer (5) from bottom to top, wherein an anode (7) and a cathode (8) are arranged above the barrier layer (5), F ions are injected into 1-3 microns below the anodein the barrier layer (5) to form an F ion protection ring (6), and a passivation layer (9) is arranged between the anode and the cathode. As the F ion protection ring is arranged in the barrier layer, the edge electric field peak value below the anode is reduced, the breakdown voltage is improved, the process is simple, the rate of finished products is high, the reliability is good, and the diodecan be used as a basic device for a high-power system and switch application.

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