The invention discloses a method for extracting stray parameters of a laminated bus bar based on frequency characteristics of a SiC MOSFET. The method comprises the following steps of firstly settingup a SiC MOSFET double-pulse test platform, and externally connecting the section under test of the laminated bus bar to the test platform; connecting multiple sets of additional capacitors in parallel at both ends of the SiC MOSFET, using the frequency information of oscillation in the off-voltage waveform of the SiC MOSFET before and after the additional capacitors are connected in parallel to obtain the resonance angular frequencies of multiple sets of equivalent circuit models, and further calculating the stray inductance and parasitic capacitance of the laminated bus bar to achieve the extraction of stray parameters of the laminated bus bar. The invention utilizes the high switching speed characteristics of the SiC MOSFET to excite obvious off-voltage oscillations. Compared with the traditional indirect measurement method, the measurement deviation caused by human factors is reduced. In addition, the invention can measure the stray inductance and parasitic capacitance in any section of the laminated bus bar, and the measurement is more flexible and comprehensive.