The invention provides a resistive random access memory and a manufacturing method thereof. According to the resistive random access memory and the manufacturing method thereof provided by the invention, a first electrode is formed on the surface of a semiconductor substrate, an intercalation layer is formed on the first electrode, a resistive switching layer is formed on the intercalation layer,a barrier layer is formed on the resistive switching layer, and a second electrode is formed on the barrier layer. The intercalation layer can be matched with the resistive switching layer to achievebetter device performance, and the initial resistance of the resistive random access memory can be modulated through the intercalation layer, so that the storage window of the resistive random accessmemory can be enlarged, and the process uniformity and the performance of the resistive random access memory can be improved.