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CN1138217A 高电迁徒阻力的多层金属化结构及其设计方法 无效 - 驳回

高电迁徒阻力的多层金属化结构及其设计方法
摘要：
一种高电迁徙阻力的多层金属化结构及其设计方法属于VLSI，ULSI及微波器件金属化结构的制造技术领域，其特征在于：在离SiO2绝缘层欧姆接触窗口的一个回流长度处在底层导电层Al-1％Si上开有一个尽可能小的缝隙，并给出了临界回流长度的计算公式。它利用了与电迁徙现象同时共存的回流效应来彻底消除电迁徙现象，以便从根本上解决多层金属化结构的电迁徙失效问题，从而提高了VLSI，ULSI及微波器件的寿命。
摘要（英）：

The multi-layer metallized structure with high electric migration resistance, belonging to manufacture technique of VLSI, ULSI and microwave devices, features that a slit as small as possible is made on conducting Al-1% Si layer of substrate, which is far from ohm contact window on insulative SiO2 layer by a reflux length. A calculation formula of critical reflux length is given out. The service life of VLSI, ULSI and microwave device is elongated by overcoming radically the failue problem of said metallized structure owing to electric migration.

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