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发明公开
CN1800983A 集成电路反剥离光刻方法 失效 - 权利终止

集成电路反剥离光刻方法
摘要：
集成电路反剥离光刻方法，涉及一种集成电路光刻方法，尤其是涉及一种采用改进的反剥离工艺的集成电路光刻方法。提供一种改进的集成电路反剥离光刻方法。其步骤为在硅片表面先后涂增粘剂层和反转光刻胶层后烘胶，烘胶后在硅片表面再次涂反转光刻胶层，前烘后掩膜曝光，用掩膜板遮挡；反转烘后泛曝光，再显影，淀积金层，金厚度为2μm；将溅射好金的硅片用丙酮浸泡至少4h；将浸泡过丙酮的硅片放入超声仪中进行超声剥离。解决了业内一直没有解决的在金膜较厚情况下反剥离工艺技术问题，通过工艺流程与工艺条件的改进，尤其是在涂胶工艺中，采用先涂一层胶，然后烘干后再涂第二层的工艺，显著地加厚了光刻胶的厚度，使反剥离工艺得到改进。
摘要（英）：

The invention discloses a monolithic circuit photo-etching method of improved anti-stripping craft, which comprises the following steps: coating stick layer and reversal photo-etching glue-line on the silicon wafer surface; drying the glue; coating the reversal photo-etching glue-line again; exposing the front drying and back mask; sheltering through mask plate; exposing after reversal drying; developing again; depositing metal layer with 2ª–m thickness; immersing the metal sprayed silicon wafer in the acetone for at least 4h; stripping the immersed silicon wafer in the supersonic device. The invention solves the problem of reversal striping craft in the thick metal film condition for a long time, which increases the thickness of photo-etching glue.

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