This invention provides a kind of improved method of tellurium -cadmium -mercury material ion injecting dosage of photovoltaic type infrared detector. It uses the same tellurium -cadmium -mercury membrane material developed from molecular beam epitaxial technique as base, which infects boron ion. The main process is: setting barrier layer, on which photo-etches infection region regularly. Making mask plates with gaps and superimposing them on the barrier layer respectively which Reveal the corresponding photoetching injection regions. Adjusting different ion dosage superposed formula and injecting to tellurium- cadmium -mercury base that is superimposed with mask plates and barrier layer. Finally, we can get p-n junction of serial elements. After measurement, we can get voltage-current characteristic curves of different elements and zero partial differential resistance value. After comparing, we can get the best ion infection dosage.