A semiconductor device comprises superlattices and thereby comprises a plurality of bed sets which are stacked. Each group of superlattices can comprise a plurality of basic semiconductor mono-layers which are stacked and limit a basic semiconductor part and an energy band modification layer on the basic semiconductor part, wherein the energy band modification layer can comprise at least one non-semiconductor mono-layer which is restrained in a neighboring basic semiconductor part and thereby the superlattices can have higher carrier mobility on the parallel direction than that in other conditions.