A method for fabricating a semiconductor device, including forming a gate insulating layer and a gate electrode on a substrate; forming insulating layer sidewalls at sides of the gate electrode; forming source/drain regions in surface portions of the substrate that are located, respectively, at sides of the gate electrode; forming a conductive silicide layer on the entire surface of the substrate; and selectively removing the silicide layer from areas other than the gate electrode and the source/drain regions of the substrate. The conductive silicide layer may be made by forming a silicon layer on an entire surface of the substrate; forming a conductive layer on the silicon layer; and thermal-processing the substrate such that the conductive layer reacts with the silicon layer.