The present invention provides a semiconductor device of which mass production is possible and the structure is different from that of a conventional small-size element. In addition, it is an object of the invention to provide a structure of a semiconductor device of which the strength can be improved, destruction of an element in manufacturing can be suppressed, and the reliability and yield arehigh, and a manufacturing method of the semiconductor device. The invention includes a layer having an integrated circuit, a first terminal which is formed over the layer having the integrated circuit and is electrically connected to the layer having the integrated circuit, a conductive layer which functions as an antenna, which is formed over the first terminal and is electrically connected to the first terminal, and a second terminal which is formed over the layer having the integrated circuit and is not electrically connected to the layer having the integrated circuit, the conductive layerwhich functions as the antenna, and the first terminal.