In one aspect, a method of fabricating a semiconductor memory device is provided which includes forming a mold insulating film over first and second portions of a semiconductor substrate, where the mold insulating film includes a plurality of storage node electrode holes spaced apart over the first portion of the semiconductor substrate. The method further includes forming a plurality of storage node electrodes on inner surfaces of the storage node electrode holes, respectively, and forming a capping film which covers the storage node electrodes and a first portion of the mold insulating filmlocated over the first portion of the semiconductor substrate, and which exposes a second portion of the mold insulating film located over the second portion of the semiconductor substrate. The method further includes selectively removing, including wet etching, the mold insulating film to expose a sidewall of at least one storage node electrode among the storage node electrodes covered by the capping film, and removing the capping film by dry etching to expose upper portions of the storage node electrodes.