A non-volatile memory device and a method of forming the same are provided. The non-volatile memory device may include a cell isolation pattern and a semiconductor pattern sequentially stacked on a predetermined or given region of a semiconductor substrate, a cell gate line on the semiconductor pattern and on a top surface of the semiconductor substrate on one side of the cell isolation pattern, a multi-layered trap insulation layer between the cell gate line and the semiconductor substrate, and the cell gate line and the semiconductor pattern, a first impurity diffusion layer in the semiconductor substrate on both sides of the cell gate line and a second impurity diffusion layer in the semiconductor pattern on both sides of the cell gate line.