The utility model relates to a semiconductor device technology, in particular to an insulated gate bipolar translator (IGBT) chip based on N-type injection layers. The IGBT chip comprises an active area, a terminal area and a grid electrode area, wherein the N-type injection layers are arranged in the active area and the terminal area. The N-type injection layers are introduced when the IGBT is designed, so that the design of the terminal area is optimized, the size of the terminal area is reduced, the saturated voltage of the active area is reduced and the current capability of the chip is improved. The N-type injection layers are introduced under the premise of not influencing other properties of the IGBT chip, so that the proportion of each functional area of the IGBT chip is optimized and the current capability of the IGBT chip is improved.