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实用新型
CN203607391U 一种并联型IGBT的散热结构 有权 转让

一种并联型IGBT的散热结构
摘要：
本实用新型公开了一种并联型IGBT的散热结构，包括散热器本体和本体其中一面上所设的位于进风口与出风口之间的散热叶片，散热器本体的另一面用于在对应于进风口和出风口之间顺次安装两个并联的IGBT元件，进风口侧对应于第一个IGBT安装位置的散热叶片的高度低于出风口侧对应于第二个IGBT安装位置的散热叶片的高度。本实用新型的并联型IGBT散热结构及其功率模块采用进风口侧对应于第一个IGBT元件安装位置的散热叶片高度低于出风口侧对应于第二个IGBT元件安装位置的散热叶片高度的结构，使进风口部分散热能力低，出风口部分散热能力强，可有效降低前一个IGBT对后一个IGBT的热影响，使两个IGBT达到同等的散热条件，有效地使两并联IGBT达到热平衡。
摘要（英）：

The utility model discloses the heat dissipation structure of a parallel-connection type insulated gate bipolar transistor (IGBT), which comprises a radiator body and radiating blades arranged on one side of the radiator body and positioned between the air inlet and the air outlet of the radiator body. The other side of the radiator body is orderly provided with two IGBT elements connected in parallel with each other and positioned between the air inlet and the air outlet of the radiator body correspondingly. The height of radiating blades on the air-inlet side of the radiator body, positioned corresponding to the installation position of the first IGBT element, is smaller than the height of radiating blades on the air-outlet side of the radiator body, positioned corresponding to the installation position of the second IGBT element. According to the technical scheme of the heat dissipation structure of the parallel-connection type IGBT and a power module thereof, the height of radiating blades on the air-inlet side of the radiator body, positioned corresponding to the installation position of the first IGBT element, is smaller than the height of radiating blades on the air-outlet side of the radiator body, positioned corresponding to the installation position of the second IGBT element. In this way, the part of the air inlet of the radiator body is relatively low in radiating ability, while the part of the air outlet of the radiator body is strong in radiating ability. Therefore, the thermal influence of one IGBT element on the other IGBT element can be effectively reduced, so that the heat dissipation conditions of the two IGBT elements are much the same. As a result, the thermal equilibrium of the two IGBT elements connected in parallel with each other is effectively enabled.

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