The utility model discloses an N-type crystalline silicon battery. The backlight side of an N-type crystalline silicon layer is sequentially provided with a tunneling passivation layer, a (P+)-type crystalline silicon layer and a back electrode, so that a (P+N)-type transmitting electrode can be formed on the backlight side of the N-type crystalline silicon layer to separate photon-generated carriers, the back electrode can be prevented from being in direct ohm contact with the N-type crystalline silicon layer through the tunneling passivation layer, so that the surface passivation of the N-type crystalline silicon layer can be guaranteed, and the carrier compounding of the N-type crystalline silicon battery in a (P+N) node area can be reduced; moreover, the tunneling passivation layer has a quantum tunneling effect, so that a good tunneling effect can be realized, and the effective transmission of the carriers can be guaranteed; meanwhile, the light-incidence side of the N-type crystalline silicon layer is provided with an (N+)-type crystalline silicon layer, an (N+)-type crystalline silicon layer and the N-type crystalline silicon layer can form an NN+ node, so that the compounding of the carriers can be further reduced, and the separation and the collection of the multiple carriers can be promoted; finally open-circuit voltage of the battery can be improved is increased and the transformation efficiency of the battery can be improved.