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实用新型
CN203826396U 双极型功率晶体管基片 失效 - 权利终止

双极型功率晶体管基片
摘要：
本实用新型公开了一种双极型功率晶体管基片，涉及晶体管技术领域。所述基片包括晶圆片，所述晶圆片的下表面从上到下依次设有钛金属层、镍金属层和金金属层。所述基片提高了双极型功率晶体管的背面金属与晶圆片背面的粘附性能，又保证了管芯在与管座烧结在一起时的牢固可靠，同时又避免了烧结时容易在大功率芯片背面烧结处出现空洞造成功率晶体管热斑对晶体管可靠性形成威胁的被动局面，主要适合于金金属化系统，即管座烧结处是镀金的，芯片背面金属也是以金为主要参与烧结的金属体系。
摘要（英）：

The utility model discloses a bipolar power transistor substrate and relates to the technical field of a transistor. The bipolar power transistor substrate comprises a wafer, wherein a lower surface of the wafer is sequentially provided with a titanium metal layer, a nickel metal layer and a gold metal layer from up to down. The substrate improves adherence performance between back metal of a bipolar power transistor and a back face of the wafer, firm and reliable performance during sintering of a tube core and a tube seat is guaranteed, a passive situation threatening transistor reliability because of heat spots of the power transistor caused by cavities easily generated at a back face sintering portion of a large power chip during sintering is further avoided, the bipolar power transistor substrate is mainly suitable for a gold metallization system, i.e., a metal system of which a tube seat sintering portion is gilded, and the chip back face metal is mainly sintered gold.

IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66 .按半导体器件的类型区分的
H01L29/68 ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/70 ...双极器件
H01L29/72 ....晶体管型器件，如连续响应于所施加的控制信号的
H01L29/73 .....双极结型晶体管
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