A schottky diode in the prior art is high in conduction resistance and voltage; the schottky diode of the utility model comprises a substrate; a bottom surface of the substrate is covered by a cathode; a top surface of the substrate is stacked in sequence by a buffer layer, a first nitride semiconductor layer, a second nitride semiconductor layer, and an anode; the anode comprises a first anode electrode and a second anode electrode, wherein the first anode electrode is arranged on a top surface of the second nitride semiconductor layer, and the second anode electrode is arranged on a top surface of the first anode electrode and simultaneously extends to the top surface of the second nitride semiconductor layer; a Schottky barrier formed by the second anode electrode and the second nitride semiconductor layer is higher than a Schottky barrier formed by the first anode electrode and the second nitride semiconductor layer; the schottky diode also comprises an ohmic contact layer extending from the substrate buffer layer and a side face of the first nitride semiconductor layer to a side face of the second nitride semiconductor layer; the schottky diode of the utility model is low in conduction resistance and voltage.