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Utility Model
CN206293434U 半导体器件 有权

半导体器件
Abstract:
本申请涉及半导体器件。该半导体器件包括：第一层，具有边缘区域；金属化结构，具有面向所述第一层的边缘区域而并未接触所述边缘区域的外围部分。由此避免热机械应力。
Abstract(English):

The utility model relates to a semiconductor device. This semiconductor device includes: the first layer has the fringe region, the metallization structure, have towards the fringe region of first layer and not contacting the periphery of fringe region. Avoid hot mechanical stress from this.

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