The utility model discloses a back of body contact crystal silicon battery electrode network version structure sets up on the back of the body surface of crystal silicon battery, is provided with P type doped region and N type doped region on the out -of -the -way surface of crystal silicon battery, and this electrode network version structure is including just superfine grid line, the thin grid line of negative pole, anodal main grid line and negative pole main grid line, just superfine grid line with the thin grid line of negative pole is interdigital form transversely alternately arranges on the back of the body surface of crystal silicon battery in proper order, is used for collecting the electric current of P type doped region and N type doped region respectively, anodal main grid line with negative pole main grid line is vertically arranged on the back of the body surface of crystal silicon battery in parallel to each other, anodal main grid line only with just superfine grid line electrical property intercommunication, negative pole main grid line only with the thin grid line electrical property of negative pole intercommunication. This structure can effectively be avoided scrapping or the retest problem because of what unidentified printing direction or test direction caused, and the printing of production process and the problem of test discernment direction have beensimplified to very big degree, have improved production efficiency.