发明公开
- 专利标题: A sample and hold circuit
- 专利标题(中): Abtast- und Speicherschaltung。
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申请号: EP80301802.7申请日: 1980-05-30
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公开(公告)号: EP0020160A1公开(公告)日: 1980-12-10
- 发明人: Takahashi, Masayuki , Goto, Kunihiko , Tanaka, Hisami , Ohhata, Michinobu
- 申请人: FUJITSU LIMITED
- 申请人地址: 1015, Kamikodanaka, Nakahara-ku Kawasaki-shi, Kanagawa 211 JP
- 专利权人: FUJITSU LIMITED
- 当前专利权人: FUJITSU LIMITED
- 当前专利权人地址: 1015, Kamikodanaka, Nakahara-ku Kawasaki-shi, Kanagawa 211 JP
- 代理机构: Abbott, Leonard Charles (GB)
- 优先权: JP68552/79 19790601
- 主分类号: G11C27/02
- IPC分类号: G11C27/02 ; G01R13/34 ; H03K13/02
摘要:
In a sample-and-hold circuit having a first MOS transistor (5) for sampling an input voltage and a holding capacitor (C o ) for holding the sampled voltage, a second MOS transistor (10) has its source and its drain both connected to the output terminal (4) of the circuit. The capacitance between the gate and output electrode (S) of the first MOS transistor (5) is substantially equal to the sum of the capacitances between the gate and the drain, and between the gate and the source, of the second MOS transistor (10). When a voltage is applied to the gate of the first MOS transistor to turn it on or off, the gate of the second MOS transistor receives the same voltage after inversion (8), so that the charge accumulated in the channel region of the first transistor, can be absorbed in the channel region of the second transistor when the first transistor is turned off. In this way, the sampled voltage can be held constant after turning off the first MOS transistor.
公开/授权文献
- EP0020160B1 A sample and hold circuit 公开/授权日:1982-12-22
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