发明公开
- 专利标题： METHOD OF FORMING PATTERNS
- 专利标题（中）： VERFAHREN ZUM FORMEN VON MUSTERN。
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申请号： EP79901465.9申请日： 1979-11-01
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公开(公告)号： EP0020776A1公开(公告)日： 1981-01-07
- 发明人: YOSHIKAWA, Akira , OCHI, Osamu , HISAKI, Tomoko , MIZUSHIMA, Yoshihiko
- 申请人： Nippon Telegraph and Telephone Public Corporation
- 申请人地址： 1-6 Uchisaiwai-cho 1-chome Chiyoda-ku Tokyo 100 JP
- 专利权人： Nippon Telegraph and Telephone Public Corporation
- 当前专利权人： Nippon Telegraph and Telephone Public Corporation
- 当前专利权人地址： 1-6 Uchisaiwai-cho 1-chome Chiyoda-ku Tokyo 100 JP
- 代理机构： Barnard, Eric Edward
- 优先权： JP137132/78 19781107
- 国际公布： WO8001020 19800515
- 主分类号： H01L21/30
- IPC分类号： H01L21/30 ; G03F1/00 ; G03C1/72 ; G03C5/24
摘要：
Method of forming patterns utilizing a photosensitive chalcogenide thin film comprising a lamination layer of amorphous chalcogenide thin film (2) and silver thin film (3). The amorphous chalcogenide thin film (22) of regions which are not exposed to light (6) or an accelerated particle beam and consequently are not doped with silver are removed by means of plasma etching with fluorine gas. According to this process, desired patterns of the amorphous chalcogenide thin film (21) doped with silver are left on a substrate. The remaining patterns are used as an etching mask to form the desired patterns on a substrate layer by a plasma etching method by removing a substrate layer (1 C).
公开/授权文献
- EP0020776B1 METHOD OF FORMING PATTERNS 公开/授权日：1983-04-20
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