它被描述为具有非常高的细胞密度，需要将在工艺步骤结束时仅做了一种高度集成的只读存储器的场效应晶体管，其允许个人化的制造方法。 该制造方法适用于生产用于二进制值的存储器，以及用于多元的存储显示的信息。 形成场效应晶体管的栅极电极（28）绝缘并接近一个衬底（10）的第一扩散区域（38）。 此后，在形成（40）的第二扩散区域，其被布置为靠近所述第一扩散区（38）的杂质被引入。 污染物的扩散常数是彼此不同显著，扩散进行，直到在相应的位置上形成一个庭院型区域（例如42和38）都杂质。

Disclosed is a method for producing a highly integrated read-only memory of field effect transistors with a very high cell density, which allows the personalization needs to be done only at the end of the process steps. The production method is suitable for producing a memory for binary values, as well as for storage of polyvalent displayed information. The gate electrode (28) of a field-effect transistor is isolated from and close to a first diffusion region. (38) formed of a substrate (10). Thereafter impurities into a second diffusion region formed (40) which is arranged close to the first diffusion region (38), is introduced. The diffusion constant of the contaminants is significantly different from each other, and the diffusion is long carried out until both impurities at the respective positions forming a yard-like region (eg 42 and 38).