发明公开
- 专利标题： Method for making filamentary pedestal transistors
- 专利标题（中）： 一种用于制造丝状基座晶体管的过程。
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申请号： EP80103971.0申请日： 1980-07-10
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公开(公告)号： EP0026276A1公开(公告)日： 1981-04-08
- 发明人: Anantha, Narasipur Gundappa , Cavaliere, Joseph Richard , Konian, Richard Robert , Srinivasan, Gurumakonda, Ramaswamiengar , Stoller, Herbert Ivan , Walsh, James Leo
- 申请人： International Business Machines Corporation
- 申请人地址： Old Orchard Road Armonk, N.Y. 10504 US
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： Old Orchard Road Armonk, N.Y. 10504 US
- 代理机构： Gaugel, Heinz (DE)
- 优先权： US80648 19791001
- 主分类号： H01L29/08
- IPC分类号： H01L29/08 ; H01L29/10 ; H01L21/00
摘要：
A method for making a bipolar filamentary pedestal transistor having reduced base-collector capacitance attributably to the elimination of the extrinsic base-collector junction. Silicon is deposited upon a coplanar oxide-silicon surface in which only the top silicon surface of the buried collector pedestal (3) is exposed through the oxide (4). Epitaxial silicon forming the intrinsic base region (9) deposits only over the exposed pedestal surface while polycrystalline silicon forming the extrinsic base region (8) deposits over the oxide surface. The polycrystalline silicon is etched away except in the base region. An emitter is formed in the base region and contacts are made to the emitter, base and collector regions.
公开/授权文献
- EP0026276B1 Method for making filamentary pedestal transistors 公开/授权日：1983-11-30
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