发明公开
- 专利标题： Semiconductor strain gauge
- 专利标题（中）： Halbleiter-Dehnungsmesser。
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申请号： EP81101182.4申请日： 1981-02-19
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公开(公告)号： EP0034807A1公开(公告)日： 1981-09-02
- 发明人: Yamada, Kazuji , Sato, Hideo , Suzuki, Seiko , Kobayashi, Ryoichi , Nishihara, Motohisa
- 申请人： Hitachi, Ltd.
- 申请人地址： 5-1, Marunouchi 1-chome Chiyoda-ku, Tokyo 100 JP
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： 5-1, Marunouchi 1-chome Chiyoda-ku, Tokyo 100 JP
- 代理机构： Beetz sen., Richard (DE)
- 优先权： JP20440/80 19800222
- 主分类号： G01L1/18
- IPC分类号： G01L1/18 ; G01L9/06 ; H01L29/84
摘要：
The invention relates to a semiconductor strain gauge comprising four piezoresistive elements (10,12,14,16) which include a low impurity concentration diffused portion and a heavily-doped diffused portion.
The resistance values of the two low impurity concentration diffused portions opposite to one another are greater than the resistance values of the other two low impurity concentration portions. The resistances of the heavily-doped diffused portions are so selected that the resistances of the piezoresistive elements (10,12,14,16) are equal.
The resistance values of the two low impurity concentration diffused portions opposite to one another are greater than the resistance values of the other two low impurity concentration portions. The resistances of the heavily-doped diffused portions are so selected that the resistances of the piezoresistive elements (10,12,14,16) are equal.
公开/授权文献
- EP0034807B1 Semiconductor strain gauge 公开/授权日：1985-02-13
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