发明公开
- 专利标题： Structure and process for fabricating an integrated circuit
- 专利标题（中）： 结构和方法，用于制造集成电路。
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申请号： EP81100493.6申请日： 1981-01-23
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公开(公告)号： EP0035111A2公开(公告)日： 1981-09-09
- 发明人: Cavaliere, Joseph Richard , Horng, Cheng Tzong , Konian, Richard Robert , Rupprecht, Hans Stephan , Schwenker, Robert Otto
- 申请人： International Business Machines Corporation
- 申请人地址： Old Orchard Road Armonk, N.Y. 10504 US
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： Old Orchard Road Armonk, N.Y. 10504 US
- 代理机构： Gaugel, Heinz (DE)
- 优先权： US126611 19800303
- 主分类号： H01L29/72
- IPC分类号： H01L29/72 ; H01L21/76
摘要：
An improved bipolar transistor structure formed in a very small area of a thin epitaxial layer (12) on a planar surface of a silicon substrate (10) of first conductivity type, said very small area of the thin epitaxial layer (12) having vertical isolating sidewalls (22) extending to the planar surface of said substrate, said area of thin epitaxial layer (12) containing in the order recited a shallow depth emitter region (43) of a second conductivity type having an exposed planar surface, a shallow depth base region (47) of said first conductivity type, and a shallow depth active collector region of said second conductivity type, an elongated region (37) of said first conductivity type surrounding said emitter (43), base (47) and active collector regions, said elongated region (37) being contained within and coextensive with said vertical isolating sidewalls (22) of said small area of said thin epitaxial layer (12), whereby the base collector capacitance is materially reduced due to the very small area of the base-collector junction.
公开/授权文献
- EP0035111B1 Structure and process for fabricating an integrated circuit 公开/授权日：1985-10-02
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