发明公开
- 专利标题: Integrated circuit device with interconnect-level logic diodes
- 专利标题(中): 具有互连级逻辑二极管的集成电路设备
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申请号: EP81305990申请日: 1981-12-21
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公开(公告)号: EP0056186A3公开(公告)日: 1983-07-20
- 发明人: Sloan, Benjamin J. , De Jong, Glenn A.
- 申请人: TEXAS INSTRUMENTS INCORPORATED
- 专利权人: TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人: TEXAS INSTRUMENTS INCORPORATED
- 优先权: US223451 19810108
- 主分类号: H01L21/70
- IPC分类号: H01L21/70 ; H01L23/52 ; H01L27/06 ; H03K19/092
摘要:
Logic circuitry is implemented in a semiconductor device using decoupling diodes formed between active areas at or between levels of interconnect formed above a monocrystalline semiconductor substrate. Schottky transistor logic and other forms of bipolar logic can be fabricated with significant area reductions using output- decoupling diodes disposed at sites which are remote from the output nodes corresponding logic-gates.
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