发明公开
EP0070499A2 A method of producing a semiconductor device
失效
Verfahren zur Herstellung einer Halbleitervorrichtung。
- 专利标题： A method of producing a semiconductor device
- 专利标题（中）： Verfahren zur Herstellung einer Halbleitervorrichtung。
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申请号： EP82106245.2申请日： 1982-07-13
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公开(公告)号： EP0070499A2公开(公告)日： 1983-01-26
- 发明人: Goto, Hiroshi
- 申请人： FUJITSU LIMITED
- 申请人地址： 1015, Kamikodanaka, Nakahara-ku Kawasaki-shi, Kanagawa 211 JP
- 专利权人： FUJITSU LIMITED
- 当前专利权人： FUJITSU LIMITED
- 当前专利权人地址： 1015, Kamikodanaka, Nakahara-ku Kawasaki-shi, Kanagawa 211 JP
- 代理机构： Seeger, Wolfgang, Dipl.-Phys.
- 优先权： JP110466/81 19810715; JP111863/81 19810717
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
The present invention relates to a method of producing a bipolar type semiconductor device. A method of producing semiconductor device of the present invention comprises the following processes:
an insulating layer consisting of an oxide film of a semiconductor substrate or layer is formed on said silicon semiconductor substrate or layer having the first conductivity type;
a polycrystalline semiconductor layer is formed on said insulating layer;
a mask layer is formed on said polycrystalline semiconductor layer;
a first base region is formed on said semiconductor substrate or layer by introducing the impurity of the second conductivity type through said polycrystalline semiconductor layer;
the polycrystalline semiconductor layer under said mask layer is removed;
an aperture is formed on said insulating layer with the remaining polycrystalline semiconductor layer or its oxide film used as the mask;
a second base region which is placed in contact with said first base region is formed by introducing the second conductivity type impurity into said semiconductor substrate or layer through said aperture;
and moreover the first conductivity type emitter region is formed within said second base region through said aperture.
an insulating layer consisting of an oxide film of a semiconductor substrate or layer is formed on said silicon semiconductor substrate or layer having the first conductivity type;
a polycrystalline semiconductor layer is formed on said insulating layer;
a mask layer is formed on said polycrystalline semiconductor layer;
a first base region is formed on said semiconductor substrate or layer by introducing the impurity of the second conductivity type through said polycrystalline semiconductor layer;
the polycrystalline semiconductor layer under said mask layer is removed;
an aperture is formed on said insulating layer with the remaining polycrystalline semiconductor layer or its oxide film used as the mask;
a second base region which is placed in contact with said first base region is formed by introducing the second conductivity type impurity into said semiconductor substrate or layer through said aperture;
and moreover the first conductivity type emitter region is formed within said second base region through said aperture.
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