发明公开
EP0073383A2 Semiconductor device having external electrodes bonded to electrodes on a semiconductor substrate and method of fabricating such a semiconductor device
失效
一种半导体器件，包括连接到电极的半导体衬底和制造这种装置的方法对外部电极。
- 专利标题： Semiconductor device having external electrodes bonded to electrodes on a semiconductor substrate and method of fabricating such a semiconductor device
- 专利标题（中）： 一种半导体器件，包括连接到电极的半导体衬底和制造这种装置的方法对外部电极。
-
申请号： EP82107381.4申请日： 1982-08-13
-
公开(公告)号： EP0073383A2公开(公告)日： 1983-03-09
- 发明人: Ooue, Michio , Wakui, Yoko , Hachino, Hiroaki
- 申请人： Hitachi, Ltd.
- 申请人地址： 5-1, Marunouchi 1-chome Chiyoda-ku, Tokyo 100 JP
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： 5-1, Marunouchi 1-chome Chiyoda-ku, Tokyo 100 JP
- 代理机构： Beetz & Partner Patentanwälte
- 优先权： JP137011/81 19810902
- 主分类号： H01L21/60
- IPC分类号： H01L21/60 ; H01L23/48
摘要：
Disclosed is a semiconductor device wherein among elements forming brazing material for bonding an electrode (21, 22) on a semiconductor substrate (2) to an external electrode (11, 12), the amounts of elements reacting with the material of electrode (21, 22) or external electrode (11, 12) and forming a compound harder and more brittle than the electrode material are smaller on the portion contacting the electrode (21,22) or external electrode (11, 12) than at other portions. A fabrication method of such device is also disclosed, involving the steps of laminating and depositing an at least two-layered metallic layer (140, 150) on the surface of the electrode (21, 22) on the substrate (2) or the surface of the external electrode (11, 12), bringing the electrodes (21, 22; 11, 12) into intimate contact with each other while opposing one another, and bonding them together by force of pressure applied to both electrodes (21, 22; 11, 12) while being heated close to an eutectic temperature of an alloy consisting of the metals of the uppermost and subsequent layers (140, 150), immediately therebelow, of the metallic layer (140, 150).
公开/授权文献
信息查询
IPC分类:
