发明公开
- 专利标题： Method of manufacturing single-crystal film
- 专利标题（中）： 一种制备单晶层的过程。
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申请号： EP82109244.2申请日： 1982-10-06
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公开(公告)号： EP0077020A2公开(公告)日： 1983-04-20
- 发明人: Tamura, Masao , Yoshihiro, Naotsugu , Natsuaki, Nobuyoshi , Miyao, Masanobu , Sunami, Hideo , Tokuyama, Takashi , Ohkura, Makoto
- 申请人： Hitachi, Ltd.
- 申请人地址： 5-1, Marunouchi 1-chome Chiyoda-ku, Tokyo 100 JP
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： 5-1, Marunouchi 1-chome Chiyoda-ku, Tokyo 100 JP
- 代理机构： Strehl, Peter, Dipl.-Ing.
- 优先权： JP160193/81 19811009
- 主分类号： H01L21/268
- IPC分类号： H01L21/268 ; H01L21/20 ; H01L21/306
摘要：
The whole surface of a polycrystalline or amorphous semiconductor film (5) disposed so as to continuously cover the surface of a single-crystal substrate (3) and an insulating film (4) is irradiated with a laser beam or electron beam, thereby to selectively melt only those parts (5') of the polycrystalline or amorphous semiconductor film which overlie the insulating film. Thus, a single-crystal semiconductor film is formed on only the Insular inslating film (4) formed on the single-crystal substrate (3).
公开/授权文献
- EP0077020B1 Method of manufacturing single-crystal film 公开/授权日：1990-05-23
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