公开(公告)号：EP0077020A3

公开(公告)日：1985-11-13

申请号：EP82109244

申请日：1982-10-06

申请人： Hitachi, Ltd.

发明人： Tamura, Masao ,  Yoshihiro, Naotsugu ,  Natsuaki, Nobuyoshi ,  Miyao, Masanobu ,  Sunami, Hideo ,  Tokuyama, Takashi ,  Ohkura, Makoto

IPC分类号： H01L21/268 ,  H01L21/20 ,  H01L21/306

CPC分类号： H01L21/02381 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02675 ,  H01L21/2636 ,  H01L21/268 ,  Y10S117/904 ,  Y10S117/905 ,  Y10S148/003 ,  Y10S148/09 ,  Y10S148/123 ,  Y10S438/969

摘要： The whole surface of a polycrystalline or amorphous semiconductor film (5) disposed so as to continuously cover the surface of a single-crystal substrate (3) and an insulating film (4) is irradiated with a laser beam or electron beam, thereby to selectively melt only those parts (5') of the polycrystalline or amorphous semiconductor film which overlie the insulating film. Thus, a single-crystal semiconductor film is formed on only the Insular inslating film (4) formed on the single-crystal substrate (3).

公开(公告)号：EP0028678A3

公开(公告)日：1984-04-25

申请号：EP80104608

申请日：1980-08-05

申请人： Hitachi, Ltd.

发明人： Yoshida, Isao ,  Wada, Yasuo ,  Tamura, Masao ,  Miyao, Masanobu ,  Ohkura, Makoto ,  Natsuaki, Nobuyoshi ,  Tokuyama, Takashi

IPC分类号： H01L21/225 ,  H01L21/268

CPC分类号： H01L21/268 ,  H01L21/32155 ,  Y10S148/091

摘要： A region (17) containing a high concentration of impurity and a desired region (18) adjacent thereto arefused by irradiation with a laser beam (10), to diffuse the impurity in the lateral direction into the desired region (18) and to render the desired region (18) a low resistance. Since this method can execute only the lateral diffusion of the impurity without affecting other portions, it is very useful for forming a high breakdown voltage MIS-FET, a resistor etc.

公开(公告)号：EP0097375A1

公开(公告)日：1984-01-04

申请号：EP83106114.8

申请日：1983-06-22

申请人： HITACHI, LTD.

发明人： Miyao, Masanobu ,  Ohkura, Makoto ,  Takemoto, Iwao ,  Warabisako, Terunori ,  Mukai, Kiichiro ,  Haruta, Ryo ,  Kimura, Shinichiro ,  Tokuyama, Takashi

IPC分类号： H01L27/08

CPC分类号： H01L21/76264 ,  H01L21/76272 ,  H01L21/76281 ,  H01L27/0688

摘要： At least one layer of insulator film (61-63) and single-crystal film (71-73) are alternately stacked and deposited on a surface of a semiconductor substrate (50), and an impurity-doped region (104-113) formed in each semiconductor film (71-73) is used as a gate, source or drain of a MOS transistor.
Thus, a three-dimensional semiconductor device is constructed in which MOS transistors are arranged, not only in the direction of the semiconductor substrate surface, but also in a direction perpendicular thereto.

公开(公告)号：EP0028678A2

公开(公告)日：1981-05-20

申请号：EP80104608.7

申请日：1980-08-05

申请人： Hitachi, Ltd.

发明人： Yoshida, Isao ,  Wada, Yasuo ,  Tamura, Masao ,  Miyao, Masanobu ,  Ohkura, Makoto ,  Natsuaki, Nobuyoshi ,  Tokuyama, Takashi

IPC分类号： H01L21/225 ,  H01L21/268

CPC分类号： H01L21/268 ,  H01L21/32155 ,  Y10S148/091

摘要： A region (17) containing a high concentration of impurity and a desired region (18) adjacent thereto arefused by irradiation with a laser beam (10), to diffuse the impurity in the lateral direction into the desired region (18) and to render the desired region (18) a low resistance.
Since this method can execute only the lateral diffusion of the impurity without affecting other portions, it is very useful for forming a high breakdown voltage MIS-FET, a resistor etc.

摘要翻译： 含有高浓度杂质的区域（17）和与其相邻的期望区域（18）通过用激光束（10）照射而熔化，以将杂质沿横向扩散到所需区域（18）中，并使 期望的区域（18）具有低电阻。 由于该方法只能执行杂质的横向扩散而不影响其它部分，因此形成高击穿电压MIS-FET，电阻等非常有用。

公开(公告)号：EP0077020B1

公开(公告)日：1990-05-23

申请号：EP82109244.2

申请日：1982-10-06

申请人： Hitachi, Ltd.

发明人： Tamura, Masao ,  Yoshihiro, Naotsugu ,  Natsuaki, Nobuyoshi ,  Miyao, Masanobu ,  Sunami, Hideo ,  Tokuyama, Takashi ,  Ohkura, Makoto

IPC分类号： H01L21/268 ,  H01L21/20 ,  H01L21/306

CPC分类号： H01L21/02381 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02675 ,  H01L21/2636 ,  H01L21/268 ,  Y10S117/904 ,  Y10S117/905 ,  Y10S148/003 ,  Y10S148/09 ,  Y10S148/123 ,  Y10S438/969

公开(公告)号：EP0085406A1

公开(公告)日：1983-08-10

申请号：EP83100771.1

申请日：1983-01-27

申请人： Hitachi, Ltd.

发明人： Tamura, Masao ,  Ohkura, Makoto ,  Miyao, Masanobu ,  Natsuaki, Nobuyoshi ,  Yoshihiro, Naotsugu ,  Tokuyama, Takashi ,  Ishihara, Hiroshi

IPC分类号： C30B1/02 ,  C30B1/08

CPC分类号： C30B1/08 ,  C30B1/023 ,  Y10S148/003 ,  Y10S148/09 ,  Y10S148/123 ,  Y10S438/909

摘要： An amorphous or polycrystalline film (3) which continuously covers the exposed surface (4) of a single crystal substrate (1) and an insulating film (2), is deposited in ultra-high vacuum and then heat-treated. The film is subjected to solid phase epitaxial growth at a temperature far lower than in prior art methods, whereby a single crystal film is formed.

公开(公告)号：EP0028678B1

公开(公告)日：1987-05-06

申请号：EP80104608.7

申请日：1980-08-05

申请人： Hitachi, Ltd.

发明人： Yoshida, Isao ,  Wada, Yasuo ,  Tamura, Masao ,  Miyao, Masanobu ,  Ohkura, Makoto ,  Natsuaki, Nobuyoshi ,  Tokuyama, Takashi

IPC分类号： H01L21/225 ,  H01L21/268

CPC分类号： H01L21/268 ,  H01L21/32155 ,  Y10S148/091

公开(公告)号：EP0097375B1

公开(公告)日：1986-12-10

申请号：EP83106114.8

申请日：1983-06-22

申请人： HITACHI, LTD.

发明人： Miyao, Masanobu ,  Ohkura, Makoto ,  Takemoto, Iwao ,  Warabisako, Terunori ,  Mukai, Kiichiro ,  Haruta, Ryo ,  Kimura, Shinichiro ,  Tokuyama, Takashi

IPC分类号： H01L27/08

CPC分类号： H01L21/76264 ,  H01L21/76272 ,  H01L21/76281 ,  H01L27/0688

公开(公告)号：EP0085406B1

公开(公告)日：1986-06-04

申请号：EP83100771.1

申请日：1983-01-27

申请人： Hitachi, Ltd.

发明人： Tamura, Masao ,  Ohkura, Makoto ,  Miyao, Masanobu ,  Natsuaki, Nobuyoshi ,  Yoshihiro, Naotsugu ,  Tokuyama, Takashi ,  Ishihara, Hiroshi

IPC分类号： C30B1/02 ,  C30B1/08

CPC分类号： C30B1/08 ,  C30B1/023 ,  Y10S148/003 ,  Y10S148/09 ,  Y10S148/123 ,  Y10S438/909

公开(公告)号：EP0077020A2

公开(公告)日：1983-04-20

申请号：EP82109244.2

申请日：1982-10-06

申请人： Hitachi, Ltd.

发明人： Tamura, Masao ,  Yoshihiro, Naotsugu ,  Natsuaki, Nobuyoshi ,  Miyao, Masanobu ,  Sunami, Hideo ,  Tokuyama, Takashi ,  Ohkura, Makoto

IPC分类号： H01L21/268 ,  H01L21/20 ,  H01L21/306

CPC分类号： H01L21/02381 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02675 ,  H01L21/2636 ,  H01L21/268 ,  Y10S117/904 ,  Y10S117/905 ,  Y10S148/003 ,  Y10S148/09 ,  Y10S148/123 ,  Y10S438/969

摘要： The whole surface of a polycrystalline or amorphous semiconductor film (5) disposed so as to continuously cover the surface of a single-crystal substrate (3) and an insulating film (4) is irradiated with a laser beam or electron beam, thereby to selectively melt only those parts (5') of the polycrystalline or amorphous semiconductor film which overlie the insulating film. Thus, a single-crystal semiconductor film is formed on only the Insular inslating film (4) formed on the single-crystal substrate (3).