发明公开
EP0084635A2 Method of forming a wide deep dielectric filled isolation trench in the surface of a silicon semiconductor substrate
失效
一种制备宽而深的坑在由硅制成的半导体衬底的表面填充有电介质的方法。
- 专利标题： Method of forming a wide deep dielectric filled isolation trench in the surface of a silicon semiconductor substrate
- 专利标题（中）： 一种制备宽而深的坑在由硅制成的半导体衬底的表面填充有电介质的方法。
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申请号： EP82111305.7申请日： 1982-12-07
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公开(公告)号： EP0084635A2公开(公告)日： 1983-08-03
- 发明人: Chu, Shao-Fu , Ho, Allen Pang-I , Horng, Cheng Tzong , Kemlage, Bernard Michael
- 申请人： International Business Machines Corporation
- 申请人地址： Old Orchard Road Armonk, N.Y. 10504 US
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： Old Orchard Road Armonk, N.Y. 10504 US
- 代理机构： Kreidler, Eva-Maria, Dr. rer. nat.
- 优先权： US336109 19811230
- 主分类号： H01L21/76
- IPC分类号： H01L21/76
摘要：
A method of forming a wide deep dielectric filled isolation trench in the surface of a silicon semiconductor substrate by forming a wide plug of chemical vapor deposited silicon dioxide in the trench, filling the remaining unfilled trench portions by chemical vapor depositing a layer of silicon dioxide over the substrate and etching back this layer. The method produces chemically pure, planar wide deep dielectric filled isolation trenches and may also be used to simultaneously produce narrow deep dielectric filled isolation trenches.
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