发明公开
- 专利标题: High voltage circuits in low voltage CMOS process
- 专利标题(中): 电路,用于放大电压到低电压的处理的CMOS晶体管。
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申请号: EP83301231.3申请日: 1983-03-08
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公开(公告)号: EP0094143A1公开(公告)日: 1983-11-16
- 发明人: Barlow, Allen R. , Petersen, Corey
- 申请人: AMERICAN MICROSYSTEMS, INCORPORATED
- 申请人地址: 3800 Homestead Road Santa Clara, CA 95051 US
- 专利权人: AMERICAN MICROSYSTEMS, INCORPORATED
- 当前专利权人: AMERICAN MICROSYSTEMS, INCORPORATED
- 当前专利权人地址: 3800 Homestead Road Santa Clara, CA 95051 US
- 代理机构: Thomson, Roger Bruce
- 优先权: US376903 19820510
- 主分类号: H03K17/10
- IPC分类号: H03K17/10 ; H03F3/42
摘要:
A CMOS push-pull output buffer (171) ist constructed with a plurality of N channel transistors (74, 75, 76) and a plurality of P channel transistors (71, 72, 73) connected in series. The voltages applied to the gates of the N channel transistors and P channel transistors are selected to divide the high voltage (+V) substantially equally across the P channel transistors when the P channel transistors are turned off, and substantially evenly divide the high voltage across the N channel transistors when the N channel transistors are turned off.
In another embodiment, selected ones of the N channel and P channel transistors are formed to have a high drain to bulk breakdown voltage.
In another embodiment, a plurality of N channel and a plurality of P channel transistors are connected in series and driven by a single ended control voltage, thus providing a first stage which drives a second stage having a plurality of P channel transistors and a plurality of N channel transistors which provide the high voltage output voltage.
In another embodiment, the first stage is driven by a single-ended control voltage and serves to drive a second stage comprising a plurality of N channel transistors and a plurality of bipolar transistors, whereby said second stage provides the high voltage output signal.
In another embodiment, selected ones of the N channel and P channel transistors are formed to have a high drain to bulk breakdown voltage.
In another embodiment, a plurality of N channel and a plurality of P channel transistors are connected in series and driven by a single ended control voltage, thus providing a first stage which drives a second stage having a plurality of P channel transistors and a plurality of N channel transistors which provide the high voltage output voltage.
In another embodiment, the first stage is driven by a single-ended control voltage and serves to drive a second stage comprising a plurality of N channel transistors and a plurality of bipolar transistors, whereby said second stage provides the high voltage output signal.
公开/授权文献
- EP0094143B1 High voltage circuits in low voltage CMOS process 公开/授权日:1986-06-25
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