发明公开
EP0094143A1 High voltage circuits in low voltage CMOS process 无效
电路,用于放大电压到低电压的处理的CMOS晶体管。

High voltage circuits in low voltage CMOS process
摘要:
A CMOS push-pull output buffer (171) ist constructed with a plurality of N channel transistors (74, 75, 76) and a plurality of P channel transistors (71, 72, 73) connected in series. The voltages applied to the gates of the N channel transistors and P channel transistors are selected to divide the high voltage (+V) substantially equally across the P channel transistors when the P channel transistors are turned off, and substantially evenly divide the high voltage across the N channel transistors when the N channel transistors are turned off.
In another embodiment, selected ones of the N channel and P channel transistors are formed to have a high drain to bulk breakdown voltage.
In another embodiment, a plurality of N channel and a plurality of P channel transistors are connected in series and driven by a single ended control voltage, thus providing a first stage which drives a second stage having a plurality of P channel transistors and a plurality of N channel transistors which provide the high voltage output voltage.
In another embodiment, the first stage is driven by a single-ended control voltage and serves to drive a second stage comprising a plurality of N channel transistors and a plurality of bipolar transistors, whereby said second stage provides the high voltage output signal.
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